Umesh K. Mishra, Director
Professor and Chair, Department of Electrical and Computer Engineering
University of California, Santa Barbara, California 93106
Tel.: (805) 893-3586; e-mail: mishra@ece.ucsb.edu

Education
Ph.D., Cornell University, Ithaca, New York, 1984, Department of Electrical Engineering
M.S., Lehigh University, Bethlehem, Pennsylvania, 1981, Department of Electrical Engineering
Bachelor of Technology (B. Tech.), Indian Institute of Technology, Kanpur, India, 1979
Professional Experience
1993 - present, Professor, Electrical & Computer Engineering Department, University of California, Santa Barbara; 1990 - 1993, Associate Professor, Electrical & Computer Engineering Department, University of California, Santa Barbara; 1989-1990, Associate Professor, North Carolina State University; March 1987 - Sept. 1988, Head, Advanced Devices, Hughes Research Laboratories; 1985-1986, Assistant Professor, Dept. of Electrical Engineering and Computer Science, University of Michigan; 1985, Principal Staff Engineer, General Electric, Syracuse, NY
Awards, Honors
1998, Advisor to Best Student Oral Presentation, P. Kozodoy, 1998 Electronic Materials Conference; 1998, Best Student Paper Award, G. Parish, COMMAD'98, University of Western Australia, Perth Australia; 1997-98, Outstanding Faculty Member, College of Engineering Student Council; 1995, Gledden Visiting Senior Fellowship, University of Western Australia; 1995, Fellow, IEEE; 1992, Young Scientist of the Year Award (Intl' GaAs Symposium); 1989, NSF, Presidential Young Investigator Award; 1988-1989, IEEE-MTT National Lecturer, "Speaker's Bureau"
Selected Publications
· Two-dimensional electron Gas AlN/GaN heterostructures with extremely thin AlN barriers, I.P. Smorchkova, S. Keller, S. Heikman, C.R. Elsass, B. Heying, P. Fini, J.S. Speck, and U.K. Mishra, In Press, Applied Physics Letters
· Dipole scattering in polarization induced III-V nitride two-dimensional electron gases, D. Jena, A.C. Gossard, and U.K. Mishra, Journal of Applied Physics, Vol. 88, No. 8, pp. 4734-4738, October 2000
· Dislocation reduction in GaN films through selective island growth of InGaN, S. Keller, G. Parish, J.S. Speck, S.P. DenBaars, and U.K. Mishra, Applied Physics Letters, Vol. 77, No. 17, pp. 2665-2667, October 2000.
· Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies, Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, and J. Singh, Journal of Applied Physics, Vol. 87, No. 11, pp. 7981-7987, June 2000
· GaN-based FETs for microwave power amplification, Y.-F. Wu, B.P. Keller, S. Keller, J.J. Xu, B.J. Thibeault, S.P. DenBaars, and U.K. Mishra, IEICE Trans. Electronics, Vol. E82-C, No. 11, pp. 1895-1905, November 1999
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Robert A. York, Co-Director
Professor , Department of Electrical and Computer Engineering
University of California, Santa Barbara, California 93106
Tel.: (805) 893-7113; e-mail: rayork@ece.ucsb.edu

Education:
Ph.D. in Electrical Engineering, Cornell University, Ithaca NY, 1991
M.S. in Electrical Engineering, Cornell University, Ithaca NY, 1989
B.S. in Electrical Engineering, University of New Hampshire, Durham NH, 1987
Academic Positions:
1999-pres: Professor, ECE Dept., University of California Santa Barbara
1996-pres: Associate Professor, ECE Dept., University of California Santa Barbara
1991-1996: Assistant Professor, ECE Dept., University of California Santa Barbara
Research Interests:
Research concentration in high frequency circuits, applied electromagnetics, and device physics, aimed primarily at the development and application of new architectures and new materials for RF/microwave devices, circuits, and systems. Current focus is on advanced integrated thin-film ferroelectrics with applications to broadband wireless and biomedical systems, and high-power GaAs and GaN-based devices and circuits for wireless systems. Specific research projects include: distributed circuits and MEMS devices using integrated Barium Strontium Titanate thin-films (phase shifters, multipliers, frequency agile filters), GaN HEMT structures and wideband power amplifiers, spatial combining techniques for high power modules. Seminal contributions in each of these areas, including the first demonstration of monolithic distributed circuit phase-shifters using sputtered BST and GaAs Schottky diodes; a university-record power-density in GaN HEMTs (6.0 W/mm GaN-on-SiC) and GaN circuits (10 Watt 1-8GHz GaN-based amplifier); a 32-MMIC power combiner system producing 150 Watts at X-band.
Selected Publications:
· Y-F. Wu, R.A. York, S. Keller, B.P. Keller, and, U.K. Mishra, "3-9GHz GaN-based microwave power amplifiers with LCR broadband matching", IEEE Microwave Guided Wave Lett. , vol. 9, pp. 314-316, August 1999.
· J. J. Xu, Y-F. Wu, S. Keller, G. Parish, S. Heikman, U.K. Mishra, and R.A. York, "1-8GHz GaN-based power amplifier using flip-chip bonding", IEEE Microwave Guided Wave Lett. , vol. 9, pp. 277-279, July 1999.
· H.-C. Chang, X. Cao, U.Mishra, and R.A. York, "Phase noise in coupled oscillators: theory and experiment", IEEE Trans. Microwave Theory Tech. , vol. MTT-45, pp. 604-615, May 1997.
· P. Padmini, T.R. Taylor, M.J. Lefevre, A.S. Nagra, J.S. Speck and R.A. York, "Realization of High Tunability Barium Strontium Titanate Thin Films by RF Magnetron Sputtering", Applied Physics Letters, vol. 75, pp. 3186-3188, November, 1999.
· N.-S. Cheng, T.-P. Dao, M.G. Case, D.B. Rensch and R.A. York, "A 120-Watt X-Band Spatially Combined Solid State Amplifier", IEEE Trans. Microwave Theory Tech, vol. MTT-47, pp. 2557-2561, December, 1999.
· H.C. Cheng, A. Borgioli, P. Yeh, R.A. York, "Analysis of oscillators with external feedback loop for improved locking range and noise reduction", IEEE Trans. Microwave Theory Tech. , vol. 47, pp. 1535-1543, Aug 1999.
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Shuji Nakamura
Professor , Department of Materials
University of California, Santa Barbara, California 93106-5050;
Tel.: (805) 893-5552; e-mail: shuji@engineering.ucsb.edu

Education
Doctor of Engineering (1994) from University of Tokushima, Japan
Master of Electronic Engineering (1979) from University of Tokushima, Japan
Bachelor of Electronic Engineering (1977) from University of Tokushima, Japan
Professional Positions:
1999 - Present Professor, University of California, Santa Barbara, Materials Dept., 1993 1999 Senior researcher, Department of Research and Development (R & D), Nichia Chemical Ind., Ltd. 1989 - 1993 Group head, R &D 2nd Section, Nichia Chemical Ind., Ltd, 1988 - 1989 Visiting research associate, Electronic Engineering, University of Florida, 1985 - 1988 Group head, R & D 1st Section, Nichia Chemical Ind., Ltd, 1979 - 1984 R & D, Nichia Chemical Ind., Ltd
Honors and Professional Activities:
Nikkei BP Engineering Award (1994, 1996); Best Paper Award of Japanese Applied Physics Society (1994, 1997); Sakurai Award (1995); Nishina Memorial Award (1996); IEEE Lasers and Electro-Optics Society Engineering Achievement Award (1996); Society for Information Display (SID) Special Recognition Award (1996); Okochi Memorial Award (1997); Materials Research Society (MRS) Medal Award (1997); Innovation in Real Materials (IRM) Award (1998); C&C Award (1998); IEEE Jack A. Morton Award (1998); British Rank Prize (1998); Julius-Springer Prize for Applied Physics (1999); Takayanagi Award (2000); Carl Zeiss Research Award (2000); Honda Award (2000); Crystal Growth and Crystal Technology Award (2000); 1995 developed the first group-III nitride-based blue/green LEDs. developed the first group-III nitride-based violet laser diodes (LDs) in 1995. Authored 180 technical publications, 8 books and 12 book chapters, 100 registered patents in Japan and 20 in the US.
Selected Publications:
· S. Nakamura, "III-V nitride-based short-wavelength LEDs and LDs", Group III Nitride Semiconductor Compounds, edited by Bernard Gil, Oxford Science Publications, Oxford (1998) pp.391-416.
· S. Nakamura, "InGaN-based laser diodes", Annual Review of Materials Science Vol. 28, edited by E. N. Kaufmann, J. A. Giordmaine and A. G. Evans, Annual Reviews, Palo Alto, California (1998) pp. 125-152.
· S. Nakamura, "UV, blue and green InGaN quantum well structure LEDs", Gallium Nitride and Related Semiconductors, EMIS Datareviews Series No. 23 edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (1999) pp.533-541.
· S. Nakamura, "InGaN/GaN/AlGaN-based laser diodes", Gallium Nitride and Related Semiconductors, EMIS Datareviews Series No.23 J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel, eds. (1999) pp.587-595.
· S. Nakamura, [Laser Diodes], GaN and Related Materials II, editted by S. J. Pearton (Optoelecronic properties of semiconductors and superlattices; Vol.7) Gordon and Breach Science publishers, Amsterdam (1999) pp.1-46.
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Steven P. DenBaars
Professor, Department of Materials and Electrical & Computer Engineering,
University of California, Santa Barbara, California 93106-5050;
Tel.: (805) 893-8511; e-mail: denbaars@engineering.ucsb.edu

Education:
B.S. Materials and Metallurgical Engineering, University of Arizona, Tuczon, Arizona, 1984; M.S. degree, Department of Materials Science, University of Southern California, Los Angeles, California, 1986; Ph.D. degree, Department of Electrical Engineering, University of Southern California, Los Angeles, California, 1988.
Professional Positions:
1984-88 Research Assistant, USC Compound Semiconductor Laboratory, 1988-91; Research and Development Engineer, Hewlett-Packard Optoelectronics, San Jose, CA;1991-94; Assistant Professor, University of California, Santa Barbara, Materials Dept., 1994-1998: Associate Professor, University of California, Santa Barbara, Materials Department; 1998-pres: Professor, University of California, Santa Barbara, Materials Dept.,
Honors and Professional Activities:
NSF Young Investigator Award 1994-99; Young Scientist Award from the International Symposium on Compound Semiconductor s in 1998. CNN Story on UCSB Blue Laser Diodes; Chairman, LEOS Summer Topical on Gallium Nitride; Co-Organizer, Fall MRS Symposium on GaN Materials; Co-Organizer, Panel Member, JTEC Panel; Panel Review and tour of WTEC, Oral report toNSF, ONR on WTEC panel, Committee Member, OIDA panel, Co-founded Nitres Inc. GaN start-up company; Authored over 200 technical publications, 3 book chapters, 100-conference presentation, and 6 patents.
Selected Publications
· P.Fini, A.Munkholm, C.Thompson, G.B.Stephenson, J.A.Eastman, M.V.Romana Murty, O.Auciello, L.Zhao, S.P.DenBaars, J.S.Speck, "In situ real-time measurement of wing tilt during lateral epitaxial overgrowth ofGaN", Appl. Phys. Lett. 76, 3893 (2000)
· Y.F. Wu, B.P. Keller,S. Keller, N.X. Nguyen, U. Mishra, U.K. and S.P. DenBaars, "Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 Ghz," IEEE Electron Device Letters, Sept. 1997, V18, N9:438-440.
· S. DenBaars and S. Keller, 'MOCVD of Group III-Nitrides," Chapter 2, J. Pankove and T. Moustakas, Gallium Nitride Materials and Devices," Academic Press, 1997, V50, page11-37.
· I.Shmagi, J. Muth, R. Kolbas, M. P. Mack, A.C. Abare, S. Keller, L. A. Coldren, U.K. Mishra, and S. DenBaars, "Reconfigurable Optical Properties in InGaN/GaN quantum wells," Appl. Physics Lett. V71 N1: 1455.1996
· M.P. Mack, A. C. Abare, M. Aizorcorbe, P. Kozodoy, S. Keller, U.K. Mishra, L.A. Coldren, and S.P. DenBaars, "Characteristics of InGaN MQW Blue Laser Diodes Grown by MOCVD,"MRS Internet Journal of Nitride Research, 1997, Volume 2, Article 41.
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James S. Speck
Professor, Department of Materials
University of California, Santa Barbara, California 93106-5050;
Tel.: (805) 893-8005; e-mail: speck@mrl.ucsb.edu

Education
B.Sc.Eng., Magna Caume Laude., August 1983, University of Michigan, Ann Arbor, MI 1979 - 1983.
S.M. Metallurgy, 1985, Massachusetts Institute of Technology, Thesis Advisor: John VanderSande
Sc.D. Materials Science, 1989, Massachusetts Institute of Technology, Thesis Advisor: Mildred Dresselhaus
Professional Employment History;
Post-doc., Materials Science Massachusetts Institute of Technology, Cambridge, MA. 1989 - 1990
Assistant Professor, Materials Department, University of California, Santa Barbara 1990 - 1995
Associate Professor, Materials Department , University of California, Santa Barbara 1995 - 1999
Professor, Materials Department, University of California, Santa Barbara 1999-present
Research Interests
Speck's research focuses on the relationship between thin film electronic materials growth, micro-structure, and the relation between microstructure and physical properties. Much of the experimental work focuses on MOCVD or MBE growth studies coupled with structural characterization by trans-mission and scanning electron microscopy, x-ray diffraction, and atomic force microscopy. Speck also has active research and collaborations in modeling microstructure and physical properties. His current work is largely centered on the wide bandgap nitrides, but he also has projects in to defect reduction in highly misfitting thin film semiconductors, the growth and microstructure of thin film oxides grown epitaxially on semiconductor or oxide substrates, and the structure and properties of epitaxial ferro-electric films. Speck is a member of the Materials Research Society, the American Physical Society, and the Microscopy Society of America. He authored approx. 180 scientific papers.
Recent Publications:
· "Hydrogen passivation of deep levels in n-GaN," A. Hierro, S.A. Ringel, M. Hansen, J.S. Speck, U.K. Mishra, S.P. DenBaars, Appl. Phys. Lett. 77, 1499 (2000).
· "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy," B. Heying, R. Averbeck, L.F. Chen, E. Haus, H. Riechert, J.S. Speck, J. Appl. Phys. 88, 1855 (2000).
· "Modeling of threading dislocation reduction in growing GaN layers," S.K. Mathis, A.E. Romanov, L.F. Chen, G.e. Beltz, W. Pompe, J.S. Speck, phys. stat. solidi a 179, 125 (2000)
· "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBars, J.S. Speck,U.K. Mishra, Appl. Phys. Lett. 77 250 (2000).
· "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN," P. Fini, A. Munkholm, C. Thompson, G.B. Stephenson, J.A. Eastman, R.M.V. Murty, O. Auciello, L. Zhao, S.P. DenBaars, J.S. Speck, J.S.. Appl. Phys. Lett. 76, 3893 (2000).
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Jasprit Singh
Professor, Electrical Engineering and Computer Science
University of Michigan, Ann Arbor, MI
Tel. (734) 764-3350; Email: singh@engin.umich.edu

Education
Ph.D., Physics, University of Chicago, 1980
M.Sc., Physics, University of Chicago, 1976
B.Sc., Physics, University of Delhi, India, 1973 \vspace*{0.15in}
Employment
The University of Michigan, Dept. of Electrical Engineering and Computer Science, Professor, 1991- present
The University of Michigan, Dept. of Electrical Engineering and Computer Science, Assoc. Professor, 1987-1991
The University of Michigan, Dept. of Electrical Engineering and Computer Science, Asst. Professor, 1985 - 1987
Wright Patterson AFB, Dayton, OH, Research Scientist, 1983 - 1985
University of Southern California, Research Associate, 1980 - 1983
Field of Specialization
Optoelectronic properties of Semiconductor Heterostructures
Transport in Semiconductor Devices, Growth Issues in Heteroepitaxy
Recent Publications
About 250 papers have been published in refereed journals. He has graduated 13 Ph. Ds. Additionally Jasprit Singh has published 7 textbooks. His recent books are: Modern Physics for Engineers, (Wiley Interscience, 1999) and Semiconductor Devices: Basic Principles, (John Wiley, 2001). Some relevant recent papers are listed below.
· Yifei Zhang and Jasprit Singh, "Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor", J. of Appl. Phys. 85, 587 (1999);
· Yifei Zhang and Jasprit Singh, "The use of Kubo formula to examine low temperature transport limited by interface roughness and phonons in metal-oxide-semiconductor field effect transistors", J. of Appl. Phys., 85, 2213 (1999);
· Yifei Zhang and Jasprit Singh, "Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal-oxide-semiconductor field-effect transistors", Appl. Phys. Lett. 73, 1577 (1998);
· Madhusudan Singh, Yifei Zhang, Jasprit Singh and Umesh Mishra, ``Examination of Tunnel Junctions in the AlGaN/GaN system: Consequences of Polarization Charge'' Applied Physics Letters, 77, 1867, 2000.
· Yifei Zhang and Jasprit Singh, ``Monte Carlo Studies of Two Dimensional Transport in GaN/AlGaN Transistors: Comparison with Transport in AlGaAs/GaAs Channels'', J. Applied Physics, January, 2001 issue.
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Ali Hajimiri
Assistant Professor of Electrical Engineering
MS 139-93, California Institute of Technology
Pasadena, CA 91125
Tel. (626) 395-2312; Email: hajimiri@caltech.edu

Education
Stanford University, Electrical Engineering, Ph.D., 1998.
Stanford University, Electrical Engineering, M.S., 1996.
Sharif University of Technology, Electrical Engineering, Electronics, B.S., 1994.
Appointments
1998 to present: California Institute of Technology, Assistant Professor of Electrical Engineering.
1997: Bell Laboratories (Lucent Technologies), Silicon Circuits Research Department.
1995: Sun Microsystems, UltraSparc Microprocessor Division.
1993-1994: Signetics (now Philips Semiconductors), Design Engineer.
Awards
Co--recipient of the International Solid-State Circ. Conf. 1998 Jack Kilby Best Paper Award.
Bronze Medal Winner of the 21st International Physics Olympiad, Groningen, Netherlands.
Selected Related Publications
1. Ali Hajimiri and Thomas H. Lee, The Design of Low Noise Oscillators, Boston, MA: Kluwer Academic, 208 pages 1999.
2. Ali Hajimiri and Thomas H. Lee, "A General theory of Phase Noise in Electrical Oscillators," IEEE Journal of Solid-State Circuits, vol. 33, no. 2, pp. 179-94, Feb. 1998.
3. Hui Wu and Ali Hajimiri, "A 10GHz CMOS Voltage Controlled Oscillator," IEEE Custom Integrated Circuit Conference (CICC), Orlando, Florida May 2000.
4. Ali Hajimiri and Thomas. H. Lee, "Design Issues in CMOS Differential LC Oscillators," IEEE Journal of Solid-State Circuits, vol. 34, no. 5, pp. 717-724, May 1999.
5. Ali Hajimiri, Sotirios Lymotyrakis and Thomas H. Lee, "Jitter and Phase Noise in Ring Oscillators," IEEE Journal of Solid-State Circuits, vol. 34, no. 6, pp. 790-804, June 1999.
6. Donhee Ham and Ali Hajimiri, "Design and Optimization of a Low Noise 2.4GHz CMOS VCO with Integrated LC tank and MOSCAP tuning," IEEE International Symposium on Circuits and Systems, May 2000, Geneva Switzerland.
7. Donhee Ham and Ali Hajimiri, "Complete Noise Analysis for CMOS Switching Mixers via Stochastic Differential Equations," IEEE Custom Integrated Circuit Conference (CICC), Orlando, Florida May 2000.
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Education
1965 Ph.D. in Solid State Physics
University of Bucharest, Romania
Accredited in the Federal Republic of Germany
1959 M.S. in Physics with highest honors
University of Bucharest, Romania
Profile:
· Steady record of federal funding since 1971, 34 grants: NSF, AFOSR, ONR, ARO, NEDO, JSPS.
· Originator of new directions in 5 disciplines of engineering and science. Providing national and international leadership in scholarly research administration. Now 4 active Federal Grants
· Discovered seven new physical effects with applications in science and engineering allowing for a revolution in high-technology hardware and revision of quantum notions.
· Director of Intertnatl. Project "Nonlinear Maser-Soliton Plasma Dynamics", including 11 PhD's and 3 University Professors, at Kurchatov Atomic Inst., Moscow, since 1992.
· Successful record of leadership in the Permanent International Committee on Noise in Physical Systems since 1982: ICNF'93 Chair. SDI: Nuclear MHD reactor in space engineering.
· Chairman of the continuing series of International Quantum 1/f Symposia, a series started by A. van der Ziel in 1985: theory and applications of the quantum 1/f Effect.
· Author of over 190 papers published in refereed journals, in peer-reviewed conference proceedings, or books edited by other scientists. Space Defense Init. Engineer-Scientist 87-90.
· Editor of the Proceedings of the 12th Int. Conf. on Noise in Physical Systems in Amer. Inst. of Physics Conf. Proceedings #285 and of the Quantum 1/f Proceedings Series: AIP #282, 371, 466..
· Found the quantum 1/f effect, the nature of 1/f phase noise in quartz resonators, oscillators and 1/f noise in photodetectors, FET, HEMT, BJT, HBT with simple quantum 1/f engineer formulas
· The 30 winning proposals (2 of them with 3 others, one with another colleague) total over 11,000,000$ in US Federal funds and 360,000$ from Japan.
Experience
l973-Present UNIVERSITY OF MISSOURI ST. LOUIS, St. Louis, MO, Professor of Physics
1992-2000 KURCHATOV ATOMIC PHYSICS INSTITUTE, Moscow, Russia
Director, International Cooperation on Nonlinear Maser-Soliton Plasma Dynamics
l969-73 UNIVERSITY OF MISSOURI - St. Louis, MO, Associate Professor
1967-69 EUROPEAN INSTITUTE OF PHYSICAL RESEARCH, "MAX VON LAUE - PAUL LANGEVIN, Research Scientist (Wissenschaftlicher Mitarbeiter),
A: Garching, (Munich) F.R. Germany, l967-l969, and Summer l970 (3 months); also Summer
l972 (3 months);
B: Grenoble (France) l968 (2 months) with Prof. H. Maier-Leibnitz and R.L. Mössbauer.
l964-1967 CIVIL ENGINEERING INSTITUTE, Bucharest, Scientific Assistant
l960-1967 INST. OF PHYSICS OF THE ROMANIAN ACADEMY, Bucharest, Research Scientist
l959-1960 INSTITUTE OF HYDROTECHNICAL RESEARCH, BUCHAREST, Research Scientist
[Top]

Dr. David C. Look
Senior Research Physicist, and Director, Semiconductor Research Center
Department of Physics, Wright State University
3640 Col. Glenn Hwy. Dayton, OH 45435
Tel. ; Email: david.look@wright.edu

Vitae
Dr. Look obtained B. of Phys. and M. S. degrees from the University of Minnesota in 1960 and 1962, respectively, a Ph.D. degree from the University of Pittsburgh in 1966, and a M.S. in Management Science from the University of Dayton in 1978. He served as a Research Scientist in the U.S. Air Force from 1966-1969, a Senior Research Physicist at the University of Dayton from 1969-1980, and a Senior Research Physicist at Wright State University from 1980-present. Dr. Look has carried out extensive electrical, optical, and magnetic resonance studies of compound semiconductors, including GaN, ZnO, GaAs, InP, CdS, CdSe, and CdTe, and has published over 290 journal articles and book chapters, and has been awarded 6 patents. His monograph, "Characterization in GaAs Materials and Devices" was published by Wiley in 1989. His first-author publications are cited about 200 times per year, according to Citation Index. He is a fellow of the American Physical Society.
Five relevant publications
· "Low Frequency Noise in n-GaN with High Electron Mobility", M.E. Levinshtein, S.L. Rumyantsev, D.C. Look, R.J. Molnar, M. Asif Khan, G. Simin, V. Advarahan, and M.S. Shur, J. Appl. Phys., vol. 86, p. 5075, 1999.
· "Electron and Hole Traps in GaN p-i-n Photodetectors Grown by Reactive Molecular Beam Epitaxy", Z-Q. Fang, D.C. Look, C. Lu, and H Morkoç, J. Electronic Mater., vol. 29, p. L19, 2000.
· "On the Main Irradiation-Induced Defect in GaN", L. Polenta, Z-Q. Fang, and D.C. Look, Appl. Phys. Lett. vol. 76, p. 2086, 2000.
· "Dislocation Scattering In GaN", D.C. Look and J.R. Sizelove, Phys. Rev. Lett., vol. 82, p. 2552, 1999.
· "Defect Donor and Acceptor in GaN", D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molnar, Phys. Rev. Lett. vol. 79, p. 2273, 1997.
[Top]

STEVEN A. RINGEL
Assoc. Professor, Department of Electrical Engineering
Ohio State University
205 Dreese Laboratory
2015 Neil Avenue
Columbus, OH 43210-1272 USA Phone: (614) 292-6904 Fax: (614) 292-9562
Tel. (614) 292-6904; Email: ringel@ee.eng.ohio-state.edu or ringel.5@osu.edu

PROFESSIONAL PREPARATION
The Pennsylvania State University Electrical Engineering B.S. 1984
The Pennsylvania State University Engineering Science M.S. 1986
Georgia Institute of Technology Electrical Engineering Ph.D. 1991
PROFESSIONAL APPOINTMENTS
Associate Professor, Department of Electrical Engineering, The Ohio State University, 9/97- present
Assistant Professor, Department of Electrical Engineering, The Ohio State University, 9/91- 8/97
SELECTED AWARDS, DISTINCTIONS AND HONORS
Lumley Research Award, College of Engineering, The Ohio State University, 2000, 1996
Stanley F. Harrison Faculty Award (for Excellence in Engineering Education), Ohio State U. 1999
Best Presentation (student adviser award), 1997, 1995 - TMS Electronic Materials Conferences.
Annual Research Accomplishment Award, College of Engineering, The Ohio State University,1997.
NSF National Young Investigator (NYI) Award, National Science Foundation, 1994.
Senior Member, IEEE
SELECTED PROFESSIONAL ACTIVITIES
Director and Founder of MBE Facility and Defect Spectroscopy Laboratories at OSU
Elected Member, Solid State Electronics Editorial Board, 2000.
Elected Member, TMS/IEEE Electronic Materials Conference Committee, 1999-2002,
Chair, IEEE Electron Devices Society/Laser and Electrooptics Society Columbus Chapter since 1992.
RESEARCH FUNDING AND SELECTED PUBLICATIONS:
More than $11M ($5M individually) raised from govt. and industry over past 5 years.
· Hierro, S.A. Ringel, M .Hansen, J.S. Speck, U.K. Mishra and S.P. DenBaars, "Hydrogen passivation of deep levels in n-GaN," Appl. Phys. Lett. vol. 77, pp. 1499-1501, 2000.
· Hierro, S.A. Ringel, M.A. Hansen, U. Mishra, S. Denbaars and J. Speck, "Optically and Thermally Detected Deep Levels in n-type GaN," Appl. Phys. Lett. vol. 76, pp. 3064-3066, 2000
· J.A. Carlin, S.A. Ringel, E.A. Fitzgerald, M. Bulsara and B.M. Keyes,"Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates,"Appl.Phys.Lett.,vol.76,p.1884-1886, 2000.
· Hierro, D. Kwon, L.J. Brillson, S.A. Ringel, S. Rubini, E. Pelucchi, and A. Franciosi, "Photocapacitance study of bulk deep levels in ZnSe grown by molecular-beam epitaxy,"J. Appl. Phys., vol. 87, pp. 730-738, 2000.
· D. Kwon, R.J. Kaplar, S.A. Ringel, A.A. Allerman, Steven R. Kurtz and E.D. Jones, "Deep Levels in P-Type InGaAsN Lattice-Matched to GaAs," Appl. Phys. Lett, vol. 74 pp. 2830-2832, 1999.
[Top]

Robert Trew, Department Head
Virginia Polytechnic Institute and State University
Bradley Department of Electrical and Computer Engineering
340 Whittemore Hall
Blacksburg, VA 24061-0111 USA
Tel.:(540) 231-6646
Fax: (540) 231-3362
E-mail: TREW@vt.edu

SUMMARY BIO
Dr. Trew has a distinguished academic record. He is a Fellow of IEEE and is currently Editor of the IEEE Microwaves Magazine. Previously, he served as editor of the IEEE Transactions on Microwave Theory and Techniques. He also has valuable experience as a faculty member at North Carolina State University, as a former department chair at Case Western Reserve University, and as Director of Research for the U.S. Department of Defense. In this latter position, he was responsible for providing scientific leadership, management oversight, policy guidance, and coordination of the $1.3 billion annual basic research programs of the Military Services and Defense Agencies.