NON-CESIATED SOLID STATE ELECTRON EMITTERS (COLD CATHODES) & THEIR APPLICATIONS IN VACUUM MICROELECTRONICS
FINAL PROGRESS REPORT
Professor Umesh K. Mishra
Robert D. Underwood
May 31, 1999
U.S. ARMY RESEARCH OFFICE
DAAH04-95-1-0157
UNIVERSITY OF CALIFORNIA, SANTA BARBARA
Department of Electrical & Computer Engineering
APPROVED FOR PUBLIC RELEASE;
DISTRIBUTION UNLIMITED.
THE VIEWS, OPINIONS, AND/OR FINDINGS CONTAINED IN THIS REPORT ARE THOSE OF THE AUTHOR(S) AND SHOULD NOT BE CONSTRUED AS AN OFFICIAL DEPARTMENT OF THE ARMY POSITION, POLICY, OR DECISION, UNLESS SO DESIGNATED BY OTHER DOCUMENTATION.
(1) List of Manuscripts
· R.D. Underwood, P. Kozodoy, H. Xing, S. Keller, J. P. Ibbetson, S.P. DenBaars, and U.K. Mishra, “InGaN/GaN Field Emitters with Lowered Effective Electron Affinity,” to be presented at 12th International Vacuum Microelectronics Conference, Darmstadt, Germany, July 5-9, 1999.
· R.D. Underwood, P. Kozodoy, S. Keller, S.P. DenBaars, and U.K. Mishra, "Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays," Appl. Phys. Lett., vol. 73 (3), pp. 405-407, 1998.
·
D.
Kapolnek, S. Keller, R.D. Underwood, S.P. DenBaars, and U.K. Mishra,
"Spatial control of InGaN luminescence by MOCVD selective epitaxy," J.
Crystal Growth, vol. 189/190, pp. 83-86, 1998.
·
R.D.
Underwood, S. Keller, U. K. Mishra, D. Kapolnek, B. P. Keller, S. P. DenBaars,
"GaN field emitter array with integrated anode," J. Vac. Sci.
Technol. B, vol. 16 (2), pp. 822-825, 1998.
(2) Scientific Personnel & Degrees Earned
·
Professors
Umesh K. Mishra and Steven P. DenBaars.
·
Post-doctoral
researcher Stacia Keller.
· Graduate Students Robert Underwood, David Kapolnek, and Peter Kozodoy.
· David Kapolnek has submitted his Ph.D. dissertation entitled, “Selective epitaxy of gallium nitride and related materials by metalorganic chemcal vapor deposition.”
· Robert Underwood will complete his Ph.D. dissertation entitled, “Indium gallium nitride/gallium nitride vacuum microelectronic cold cathodes: Piezoelectric surface barrier lowering” in July 1999.
(3) Inventions
· Submitted patent disclosures on InGaN-Coated Field Emitters and AlGaN/InGaN/GaN planar cold cathodes.
(4) Scientific Progress and Accomplishments
To be written.
(5) Technology Transfer
· None at this time.