REPORT DOCUMENTATION PAGE					Form Approved OMB No. 0704-0188
Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188), Washington, DC 20503.
1. AGENCY USE ONLY (Leave Blank)		2. REPORT DATE 31 Dec 95	3. REPORT TYPE AND DATES COVERED Interim Progress Report 1 Jan 95 - 31 Dec 95
4. TITLE AND SUBTITLE Non-Cesiated Solid State Electron Emitters (Cold Cathodes) & Their Applications in Vacuum Microelectronics					5. FUNDING NUMBERS DAAH04-95-1-0157
6. AUTHORS Umesh K. Mishra, Steven P. DenBaars, Robert Underwood, David Kapolnek, Bernd Keller, Stacia Keller
7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Department of Electrical & Computer Engineering University of California, Santa Barbara Santa Barbara, CA 93106					8. PERFORMING ORGANIZATION REPORT NUMBER
9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211					10. SPONSORING / MONITORING AGENCY REPORT NUMBER 33799-PH
11. SUPPLEMENTARY NOTES The views, opinions and/or findings contained in this report are those of the author(s) and should not be construed as an official Department of the Army position, policy or decision, unless so designated by other documentation.
12a. DISTRIBUTION / AVAILABILITY STATEMENT Approved for public release; distribution unlimited.					12b. DISTRIBUTION CODE
13. ABSTRACT (Maximum 200 words) Integrating an extraction electrode on a field emitter lowers the operating voltage thus making devices based on field emitter arrays (FEAs) practical. The goal of this research was to integrate an extraction electrode on a GaN FEA. GaN has several properties that are advantageous for field emission: GaN is physically hard, GaN can be doped, and GaN can be grown selectively to form FEAs. The selective regrowth of GaN studied allows the growth of uniform and high quality GaN pyramids. Measurements of emission from GaN FEAs has been observed for the first time. An improved structure which incorporates an extractor for current modulation was investigated. The proposed structure used deep etching of the regrowth areas to place the top of the pyramid near the extractor. Difficulties in growth of the pyramids in the etched structures prompted us to abandon this approach and propose an improved fabrication sequence. The FEAs are regrown using selective area regrowth. Then dielectric and extractor are deposited on the pyramids. Planarization exposes the tops and the metal and dielectric are etched away to form a self-aligned structure. The goal of future work will be to fabricate FEAs with an integrated extractor and test their electrical properties.
14. SUBJECT TERMS GaN, field emission array, selective area regrowth, integrated extractor						15. NUMBER OF PAGES 5
						16. PRICE CODE
17. SECURITY CLASSIFICATION OF REPORT UNCLASSIFIED	18. SECURITY CLASSIFICATION OF THIS PAGE UNCLASSIFIED			19. SECURITY CLASSIFICATION OF ABSTRACT UNCLASSIFIED		20. LIMITATION OF ABSTRACT UL
NSN 7540-01-280-5500						Standard Form 298 (Rev. 2-89) Prescribed by ANSI Std. Z39-1 298-102