Stacia Keller, PhD

Electrical and Computer Engineering Department, University of California Santa Barbara, USA

E-mail: stacia@ece.ucsb.edu

Selected publications (from > 400)

On N-polar group-III nitrides:

S. Keller, H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J.S. Speck, S.P. DenBaars, U.K. Mishra,

“Recent progress in metal-organic chemical vapor deposition of () N-polar group-III nitrides”,

Semicond. Sci. Technol. 29 (2014) 113001.

S. Keller, N.A. Fichtenbaum, F. Wu, D. Brown, A. Rosales, S.P. DenBaars, J.S. Speck, U.K. Mishra,

“Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition”,

J. Appl. Phys. 102 (2007) 083546.

S. Keller, C.S. Suh, N.A. Fichtenbaum, M. Furukawa, R. Chu, Z. Chen, K. Vijayraghavan, S. Rajan, S. P. DenBaars, J. S. Speck, U.K. Mishra,

“Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures”,

J. Appl. Phys. 104 (2008) 093510.

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. DenBaars, J. S. Speck, U. K. Mishra,

“Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition”,

Appl. Phys. Lett. 97 (2010) 142109.

S. Keller, N. A. Fichtenbaum, M. Furukawa, J. S. Speck, S P. DemBaars, U.K. Mishra,

“Growth and characterization of N-polar InGaN/GaN multi quantum wells”,

Appl. Phys. Lett. 90 (2007) 191908.

Using the developed epitaxial procedures N-polar transistors exhibiting output powers of 6.7 W/mm at 94 GHz [1] and 20.7 W/mm at 4 GHz [4] were fabricated at UCSB.

On other topics:

S. Keller, C. Lund, T. Whyland,Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, S. P. DenBaars, U. K. Mishra,

“InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays“,

Semicond. Sci.Technol. 30, 105020 (2015).

S. Keller, C. Schaake, N. A. Fichtenbaum, C.J. Neufeld, Y. Wu, K. McGroddy, A. David, S.P.DenBaars, C. Weisbuch, J.S. Speck, U.K. Mishra

“Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells“,

J. Appl. Phys. 100 (2006) 054314.

S. Keller, R.M. Farrell, M. Iza, Y. Terao, N. Young, U.K. Mishra, S. Nakamura, S.P. DenBaars, J.S. Speck,

“Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells”

Jpn. J. Appl. Phys. 52 (2013) 08JC10.

S. Keller, S. Heikmann, L. Shen, I.P. Smorchkova, S.P. DenBaars, U.K Mishra,

“GaN-GaN junctions with ultrathin AlN interlayers: expanding heterojunction design”

Appl. Phys. Lett. 80 (2002) 4387

S. Keller, S. Heikman, I.Ben-Yaacov, L. Shen, S.P. DenBaars, U.K. Mishra,

“Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition”,

Appl. Phys. Lett. 79 (2001) 3449.

S. Keller, I. Ben-Yaacov, S.P. DenBaars, U.K. Mishra,

“Flow modulation epitaxy of InN/GaN heterostructures; towards InN based HEMTs”,

Proceedings of International Workshop on Nitride Semiconductors, Inst. Pure& Appl. Phys. Conf. Series 1(2000)233, Tokyo, Japan.

S. Keller, G. Parish, P.T. Fini, S. Heikman, C.-H. Chen, N. Zhang, S.P. DenBaars, U.K. Mishra, Y.-F. Wu,

“Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures”,

J. Appl. Phys. 86 (1999) 5850.

S. Keller, B.P. Keller, D. Kapolnek, A.C. Abare, H. Masui, L.A. Coldren, U.K. Mishra, S.P. DenBaars,

“Growth and characterization of bulk InGaN films and quantum wells”,

Appl. Phys. Lett. 68 (1996) 3147.

S. Keller, B.P. Keller, Y.F. Wu, B. Heying, D. Kapolnek, U.K. Mishra, S.P. DenBaars,

“Influence of the sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition”,

Appl. Phys. Lett. 68 (1996) 1525.