to Solid State Electronic Devices - ECE 132 - Fall 2011
Electrons and holes in semiconductors; doping (P and N); state occupation statistics, transport properties of electrons and holes; P-N junction diodes; I-V, C-V, and switching properties of P-N junctions; introduction of bipolar transitors, MOSFET’s and JFET’s.
Band diagrams of P-N junctions and heterjunctions; current flow by drift and diffusion; bipolar transistors; recombination and generation. Schottky barriers;heterostructures.
Semiconductor Device Physics II - ECE 221B - Spring 2012
More advanced continuation of ECE 221A: field effect transistors, quantum wells and superlattices; tunneling; avalanche breakdown; physical limitations of bipolar and field effect transistors; two-dimensional current flow problems.
addition to the above curriculum, Professor Mishra directs
and advises the members of his research
group. The group is comprised of Visiting Scholars, Research Engineers,
Post-Doctoral Researchers, Ph.D. Candidates
and M.S. Students.
questions and comments - please send email to Webmaster.
October 4, 2011