ECE 132 link

ECE 221A link

ECE 221B link


  Introduction to Solid State Electronic Devices - ECE 132 - Fall 2014
   
Electrons and holes in semiconductors; doping (P and N); state occupation statistics, transport properties of electrons and holes; P-N junction diodes; I-V, C-V, and switching properties of P-N junctions; introduction of bipolar transitors, MOSFET’s and JFET’s.
  Semiconductor Device Physics - ECE 221A - Winter 2015
   
Band diagrams of P-N junctions and heterjunctions; current flow by drift and diffusion; bipolar transistors; recombination and generation. Schottky barriers;heterostructures.
  Semiconductor Device Physics II - ECE 221B - Spring 2015
   
More advanced continuation of ECE 221A: field effect transistors, quantum wells and superlattices; tunneling; avalanche breakdown; physical limitations of bipolar and field effect transistors; two-dimensional current flow problems.
   
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In addition to the above curriculum, Professor Mishra directs and advises the members of his research group. The group is comprised of Visiting Scholars, Research Engineers, Post-Doctoral Researchers, Ph.D. Candidates and M.S. Students.
   

 

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Last Modified: October 4, 2014