To Contact Mishra Group Alumni
University of California, Santa Barbara
Electrical & Computer Engineering Department
Engineering Science Building, Rm 2215
Santa Barbara, California  93106-9560
Phone: (805) 893-8956

Fax: (805) 893-8714
Email: dahlen(at)

Mishra Group Alumni

Dr. Naiqian Zhang

Dr. Sten Heikman

MOCVD Growth Technologies for Applications in AlGaN/GaN High Electron Mobility Transistors (Sept. 2002)

Dr. James G. Champlain

Oxide Aperture Heterojunction Bipolar Transistors (March 2002)

Dr. Lee McCarthy

Aluminum Gallium Nitride/Gallium Nitride Heterojunction Bipolar Transistors (Dec. 2001)

Dr. Giacinta Parish

Growth and Characterization of Aluminum Gallium Nitride/Gallium Nitride Ultraviolet Detectors (March 2001)

Dr. Prashant Chavarkar

Lattice Engineered Substrates Using Lateral Oxidation of AlAs (March 2000)

Dr. Ramakrishna Vetury

Polarization Induced 2DEG in AlGan/GaN HEMTs: On the Origin, DC and Transient Characterization (Dec. 2000)

Dr. Peter Kozodoy

Dr. Primit Parikh

Oxide-Based Electronics in Gallium Arsenide (June 1998)

Dr. Robert Underwood

Indium Gallium Nitride/Gallium Nitride Vacuum Microelectronic Cold Cathodes: Piezoelectric Surface Barrier Lowering (Aug. 1999)

Dr. James Ibbetson

Electrical Characterization of Nonstoichiometric GaAs Grown at Low Temperature by Molecular Beam Epitaxy (June 1997)

Dr. Nguyen Nguyen

Device Application of Low-Temperature-Grown Al0.3Ga0.7As: GaAs Microwave Power Effect Transistor (June 1997)

Dr. Yi-Feng Wu

AlGaN/GaN Microwave Power High Mobility-Transistors (July 1997)

Dr. Kürsad Kiziloglu

A Technology Incorporating Selective Area Regrowth for High Uniformity, Low Phase Noise, Single-Level Metal High Electron Mobility Transistors (HEMTs) (Dec. 1996)

Dr. Jeffrey Blanton Shealy

Development and Characterization of High Threshold Uniformity n-AlInAs/GaInAs Junction-Modulated HEMTs (JHEMTs) (March 1995)

Dr. Weinan Jiang
AlGaAs/GaAs Planar-Doped-Barrier Electron Emitters: Design, Fabrication, and Characterization (Dec. 1993)