GaN Planar-Doped-Barrier Electron Emitter with Piezoelectric Surface Barrier Lowering
L.Shen, I.P. Smorchkova, D.S. Green, S. Heikman, and U.K. Mishra
Department of Electrical & Computer Engineering, University of California, Santa Barbara

 

GaN Vacuum Microelectronics Electron Emitter with Integrated Extractor, National Science Foundation, Agency Contract #ECS-9528606 UCSB Professor Umesh K. Mishra 08/01/95-07/31/96
Final Report - R. Underwood, Dec 1996:
Report

Non-Cesiated Solid State Electron Emitters (Cold Cathodes) and Their Applications in Vacuum Microelectronics, Army Research Office, Agency Contract #DAAH04-95-1-0157 UCSB Professor Umesh K. Mishra and Steven DenBaars 04/01/95-03/31/99
Final Report - R. Underwood, 31 May 1999:
Documentation Page
Report
Interim Progress Report - R. Underwood, 31 Dec. 1997:
Documentation Page
Report
Interim Progress Report -
R. Underwood, 31 Dec. 1995:
Documentation Page
Report



ASSERT - Vacuum Microelectronic Electron Emitters with Stabilized Surfaces, Army Research Office, Agency Contract #DAAH04-93-G-0357 UCSB Professor Umesh K. Mishra 09/01/93-08/31/96

Efficient Vacuum Microelectronic Emitters Using Compound Semiconductors, UC MICRO /Hughes, Agency Contract #93-109 UCSB Professor Umesh K. Mishra 07/01/93-12/31/94

RF Vacuum Microelectronics, UC MICRO /TRW, Agency Contract #93-207 UCSB Professor Umesh K. Mishra 10/01/91-09/30/92

Vacuum Microelectronics Devices and Their Applications Using Compound Semiconductor Technology, Army Research Office, Agency Contract #DAAL03-91-G-0161 UCSB Professor Umesh K. Mishra and Evelyn Hu 06/01/91-05/31/94

Mishra Group
Likun Shen Currently a graduate student in the Mishra Group.
Dr. Robert Underwood Alumni
Dr. Weinan Jiang Alumni

Microelectronic Electron Emitter (NC)
Patent
#5,077,597
U.K. Mishra

GaN Field Emitter Array Diode with Integrated Anode, R.D. Underwood, S. Keller, U.K. Mishra, D. Kapolnek, B.P. Keller and S.P. DenBaars, J. Vac. Sci. Technol B, 16 (2), Mar/Apr 1998, pp. 822-825.

Spatial Control of InGaN Luminescence by MOCVD Selective Epitaxy, D. Kapolnek, S. Keller, R.D. Underwood, S.P. DenBaars, and U.K. Mishra, Journal of Crystal Growth, Vol. 189-190, June 1998, pp. 83-86.

Anisotropic Epitaxial Lateral Growth in GaN Selective Area Epitaxy, D. Kapolnek, S. Keller, R. Vetury, R. Underwood, P. Kozodoy, S.P. DenBaars, and U. K. Mishra, Applied Physics Letters, 71 (9), September 1997, pp. 1204-1206.

Tellurium-Doped Al0.43Ga0.57As/(In0.2) GaAs Modulation Doped Heterostructures By Molecular-Beam epitaxy, W.-N. Jiang, N.X. Nguyen, R.D. Underwood, and Umesh K. Mishra, Applied Physics Letter, 66 (7), 13 February 1995, pp. 845-847.